BD706 datasheet(1/2 Pages) ISC

部件名	BD706

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD706

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= -0.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -45V(Min.)

·Complement to Type BD705

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-45

V

VCES

Collector-Emitter Voltage VBE= 0

-45

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

IB

B

Base Current-Continuous

-5

A

PC

Collector Power Dissipation

@ TC=25℃

75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.67

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

70

℃/W

isc Website：www.iscsemi.cn

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