BD751B datasheet(2/2 Pages) ISC

部件名	BD751B

功能描述	isc Silicon NPN Power Transistors

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BD751B/751C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD751B

100

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BD751C

IC=100mA ; IB=0

130

BD751B

IC= 7.5A; IB= 0.75A

1.5

VCE(sat)

Collector-Emitter

Saturation Voltage

BD751C

IC= 5A; IB= 0.5A

1.0

BD751B

IC= 7.5A; IB= 0.75A

1.8

VBE(sat)

Base-Emitter

Saturation Voltage

BD751C

IC= 5A; IB= 0.5A

1.8

BD751B

VCEV= 110V;VBE(off)= 1.5V

0.5

ICEV

Collector

Cutoff Current

BD751C

VCEV= 140V;VBE(off)= 1.5V

0.5

IEBO

Emitter Cutoff Current

VEB= 7V; IC=0

1.0

BD751B

IC= 7.5A ; VCE= 2V

hFE

DC Current Gain

BD751C

IC= 5A ; VCE= 2V

100

Current-Gain—Bandwidth Product

IC= 0.5A ;VCE= 10V; ftest= 1MHz

MHz

isc Website：www.iscsemi.cn

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