BD751C datasheet(1/2 Pages) ISC

部件名	BD751C

功能描述	isc Silicon NPN Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BD751B/751C

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 100V(Min)- BD751B

= 130V(Min)- BD751C

·High Power Dissipation

·Complement to Type BD750B/750C

APPLICATIONS

·Designed for high voltage and high power amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD751B

110

VCEV

Collector-Emitter Voltage

BD751C

140

V

BD751B

100

VCEO(SUS)

Collector-Emitter Voltage

BD751C

130

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

20

A

IB

B

Base Current-Continuous

5

A

PC

Collector Power Dissipation@TC=25℃

250

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.875

℃/W

isc Website：www.iscsemi.cn

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