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BD787 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD787 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD787 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 3V 1.8 V ICEX Collector Cutoff Current VCB= 80V;VBE(off)= 1.5V VCB= 40V;VBE(off)= 1.5V;TC=125℃ 1.0 0.1 μA mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 3V 40 250 hFE-2 DC Current Gain IC= 1A; VCE= 3V 25 hFE-3 DC Current Gain IC= 2A; VCE= 3V 20 hFE-4 DC Current Gain IC= 4A; VCE= 3V 5 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 50 MHz COB Collector Output Capacitance IE= 0; VCB= 10V; f= 0.1MHz 50 pF isc Website:www.iscsemi.cn 2 |
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