BDT29 datasheet(1/2 Pages) ISC

部件名	BDT29

功能描述	isc Silicon NPN Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BDT29/A/B/C

DESCRIPTION

·DC Current Gain -hFE = 40(Min)@ IC= 0.4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A

80V(Min)- BDT29B; 100V(Min)- BDT29C

·Complement to Type BDT30/A/B/C

APPLICATIONS

·Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT29

80

BDT29A

100

BDT29B

120

VCBO

Collector-Base Voltage

BDT29C

140

V

BDT29

40

BDT29A

60

BDT29B

80

VCEO

Collector-Emitter Voltage

BDT29C

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1

A

ICM

Collector Current-Peak

3

A

IB

B

Base Current

0.4

A

PC

Collector Power Dissipation

TC=25℃

30

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.17

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

70

℃/W

isc Website：www.iscsemi.cn

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1 2

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链接网址

BDT29 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

BDT29 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

类似零件编号 - BDT29

类似说明 - BDT29

Html Pages

1 2

数据表 下载

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数据表下载