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BDT63 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 BDT63
功能描述  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BDT63 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  BDT63 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDT63 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDT63/A/B/C
DESCRIPTION
·Collector Current -IC= 10A
·High DC Current Gain-hFE= 1000(Min)@ IC= 3A
·Complement to Type BDT62/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63
60
BDT63A
80
BDT63B
100
VCER
Collector-Emitter
Voltage
BDT63C
120
V
BDT63
60
BDT63A
80
BDT63B
100
VCEO
Collector-Emitter
Voltage
BDT63C
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
B
Base Current-Continuous
0.25
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.39
℃/W
isc Website：www.iscsemi.cn


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