BDV66 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDV66/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDV66

-60

BDV66A

-80

BDV66B

-100

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDV66C

IC= -100mA ;IB=0

-120

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -10A; IB= -40mA

-2

VBE(on)

Base-Emitter On Voltage

IC= -10A ; VCE= -3V

-2.5

ICEO

Collector Cutoff Current

VCE=

2VCEOmax; IB= 0

-1

BDV66

VCB= -40V;IE= 0;TJ= 150℃

BDV66A

VCB= -50V;IE= 0;TJ= 150℃

BDV66B

VCB= -60V;IE= 0;TJ= 150℃

ICBO

Collector Cutoff Current

BDV66C

VCB= -70V;IE= 0;TJ= 150℃

-5

ICBO

Collector Cutoff Current

VCB= VCBOmax;IE= 0

-1

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5

hFE

DC Current Gain

IC= -10A ; VCE= -3V

1000

COB

Output Capacitance

IE= 0 ; VCB= -10V; ftest= 1MHz

300

Switching times

ton

Turn-on Time

μs

toff

Turn-off Time

IC= -10A; IB1= -IB2= -40mA;

VCC= 12V

3.5

μs

isc Website：www.iscsemi.cn

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