FEP30AP datasheet(2/4 Pages) VISHAY

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Document Number: 88597

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 08-Apr-10

FEP30AP thru FEP30JP

Vishay General Semiconductor

Note

(1) Thermal resistance from junction to case per diode mounted on heatsink

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST

CONDITIONS

SYMBOL

FEP

30AP

FEP

30BP

FEP

30CP

FEP

30DP

FEP

30FP

FEP

30GP

FEP

30HP

FEP

30JP

UNIT

Maximum instantaneous

forward voltage per diode

15.0 A

0.95

1.3

1.5

Maximum DC reverse current

at rated DC blocking voltage

per diode

TC = 25 °C

μA

TC = 100 °C

500

Maximum reverse recovery

time per diode

IF = 0.5 A,

IR = 1.0 A,

Irr = 0.25 A

trr

Typical junction capacitance

per diode

4.0 V, 1 MHz

175

145

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

FEP

30AP

FEP

30BP

FEP

30CP

FEP

30DP

FEP

30FP

FEP

30GP

FEP

30HP

FEP

30JP

UNIT

Typical thermal resistance per diode

RθJC

(1)

1.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-247AD

FEP30JP-E3/45

6.15

30/tube

Tube

100

150

Case Temperature (°C)

Resistive or Inductive Load

100

150

200

250

300

Number of Cycles at 60 Hz

C = 100 °C

8.3 ms Single Half Sine-Wave

FEP30AP 数据表(PDF) 2 Page - Vishay Siliconix

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