BDX77 datasheet(2/3 Pages) ISC

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX77

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=0.2A ;IB=0

V(BR)CBO

Collector-base breakdown voltage

IC=1mA ; IE=0

100

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat-1

Collector-emitter saturation voltage

IC=3A; IB=0.3A

1.0

VCEsat-2

Collector-emitter saturation voltage

IC=6A; IB=0.6A

1.5

VBEsat

Base-emitter saturation voltage

IC=6A; IB=0.6A

2.0

ICEO

Collector cut-off current

VCE=30V ;IB=0;

0.2

ICBO

Collector cut-off current

VCB=40V ;IE=0;Tj=150℃

1.0

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.5

hFE

DC current gain

IC=1A ; VCE=2V

Transition frequency

IC=0.3A ; VCE=3V

7.0

MHz

VBE

Base-emitter on voltage

IC=3A;VCE=2V

1.5

Switching times

ton

Turn-on time

1.0

μs

toff

Turn-off time

IC=2A

IB1=-IB2=0.2A;

4.0

μs

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