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BDX91 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BDX91
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BDX91 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDX91 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDX91 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDX91/93/95
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDX91
45
BDX93
60
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDX95
IC= 30mA ;IB=0
B
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
B
1.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
1.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
B
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3A; VCE= 2V
1.4
V
BDX91
VCB= 60V; IE= 0
VCB= 30V; IE= 0; TC= 150℃
0.1
2.0
BDX93
VCB= 80V; IE= 0
VCB= 40V; IE= 0; TC= 150℃
0.1
2.0
ICBO
Collector
Cutoff Current
BDX95
VCB= 100V; IE= 0
VCB= 50V; IE= 0; TC= 150℃
0.1
2.0
mA
BDX91
VCE= 60V;IB= 0
BDX93
VCE= 80V;IB= 0
ICEO
Collector
Cutoff Current
BDX95
VCE= 100V;IB= 0
0.2
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
0.1
mA
hFE-1
DC Current Gain
IC= 3A; VCE= 2V
20
hFE-2
DC Current Gain
IC= 5A; VCE= 2V
10
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
4
MHz
Switching times
ton
Turn-on Time
1.0
μs
toff
Turn-off Time
IC= 3A; IB1= -IB2= 0.3A
2.0
μs
isc Website：www.iscsemi.cn
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