BDY83 datasheet(2/2 Pages) ISC

部件名	BDY83

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BDY83

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -100mA; IB= 0

-50

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -10mA; IE= 0

-50

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -10mA; IC= 0

-10

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-1.5

VBE(on)

Base-Emitter On Voltage

IC= -0.5A; VCE= -5V

-0.9

ICEO

Collector Cutoff Current

VCE= -20V; IB= 0

-10

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

-0.2

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -0.5A; VCE= -5V

240

hFE-2

DC Current Gain

IC= -2.5A; VCE= -5V

Current Gain-Bandwidth Product

IC= -0.5A; VCE= -10V

MHz

hFE-1 Classifications

40-80

70-140

120-240

isc Website：www.iscsemi.cn

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