BU126 datasheet(2/3 Pages) ISC

部件名	BU126

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU126

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A; IB=0;

300

V(BR)EBO

Emitter-base breakdown votage

IE=1mA; IC=0

VCEsat-1

Collector-emitter saturation voltage

IC=2.5 A;IB=0.25A

VCEsat-2

Collector-emitter saturation voltage

IC=4 A;IB=1A

5.0

VBEsat

Base-emitter saturation voltage

IC=4A;IB=1A

1.5

ICES

Collector cut-off current

VCE=750V;VBE=0

Ta=125℃

0.5

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.1

hFE

DC current gain

IC=1A ; VCE=5V

COB

Output capacitance

IE=0; VCB=10V;f=0.5MHz

Transition frequency

IC=0.2 A ; VCE=10V

MHz

Fall time

IC=2.5A ;IB=0.25A

0.2

μs

BU126 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

BU126 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

数据表下载