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BU406D 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 BU406D
功能描述  Silicon NPN Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BU406D 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU406D Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU406D Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU406D Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU406D BU407D
DESCRIPTION
·
·With TO-220C package
·High voltage
·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BU406D
400
VCBO
Collector-base voltage
BU407D
Open emitter
330
V
BU406D
200
VCEO
Collector-emitter voltage
BU407D
Open base
150
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
7
A
ICM
Collector current-Peak
10
A
IB
Base current
4
A
Ptot
Total power dissipation
TC=25℃
60
W
Tj
Maximum operating junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
2.08
℃/W


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