BU505D datasheet(2/2 Pages) ISC

部件名	BU505D

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU505D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; IB= 0

700

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.9A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.9A

1.3

ICES

Collector Cutoff Current

VCE= VCESmax; VBE= 0

VCE= VCESmax; VBE= 0;TJ= 125℃

0.15

1.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE

DC Current Gain

IC= 0.1A; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V

MHz

VECF

C-E Diode Forward Voltage

IF= 2A

1.8

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

Switching Times; Resistive load

tstg

Storage Time

9.5

μs

Fall Time

IC= 2A , IB(end)= 0.9A;Vdr= -4V

LB= 25μH

0.85

μs

isc Website：www.iscsemi.cn

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