BU522B datasheet(2/2 Pages) ISC

部件名	BU522B

功能描述	isc Silicon Darlington NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon Darlington NPN Power Transistor

BU522B

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC= 1.0A; RBE= 270Ω

425

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A; IB= 80mA

2.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A; IB= 80mA

2.5

ICER

Collector Cutoff Current

VCR= 425V; RBE= 270Ω

1.0

ICBO

Collector Cutoff Current

VCB= 475V; IE= 0

1.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 2.5A; VCE= 5V

250

Current-Gain—Bandwidth Product

IC= 0.3A; VCE= 5V

7.5

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

150

isc Website：www.iscsemi.cn

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