BU705DF datasheet(2/2 Pages) ISC

部件名	BU705DF

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU705DF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ; IB= 0;L= 25mH

700

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.9A

VBE(sat)

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.9A

1.3

ICES

Collector Cutoff Current

VCE= VCESmax ; VBE= 0

VCE= VCESmax ; VBE= 0; TJ=125℃

0.15

IEBO

Emitter Cutoff Current

VEB= 5V ; IC= 0

hFE

DC Current Gain

IC= 2A ; VCE= 5V

2.2

VECF

C-E Diode Forward Voltage

IF= 3A

1.8

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V; ftest= 5MHz

MHz

Switching Times

tstg

Storage Time

7.5

μs

Fall Time

IC= 2A ;IB(end)= 0.9A; LB= 15μH

0.9

μs

isc Website：www.iscsemi.cn

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