BU2507AX datasheet(2/2 Pages) ISC

部件名	BU2507AX

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU2507AX

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ;IB= 0,L= 25mH

700

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

7.5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A ;IB= 0.8A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A ;IB= 0.8A

1.1

ICES

Collector Cutoff Current

VCE= BVCES; VBE= 0

VCE= BVCES; VBE= 0;TC=125℃

1.0

2.0

IEBO

Emitter Cutoff Current

VEB= 7.5V; IC= 0

1.0

hFE-1

DC Current Gain

IC= 100mA; VCE= 5V

hFE-2

DC Current Gain

IC= 4A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

Switching times

tstg

Storage Time

6.0

μs

Fall Time

IC= 4A, IB(end)= 0.7A; LB= 6μH;

-V

BB= 4V

0.5

μs

isc Website：www.iscsemi.cn

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