GSOT05CL-V datasheet(3/6 Pages) VISHAY

3 / 6 page

Document Number: 85182

For technical questions, contact: ESDprotection@vishay.com

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Rev. 1.2, 01-Jul-10

GSOT05CL-V

Two-Line ESD-Protection in SOT-23 Vishay Semiconductors

BiSY-MODE (1-line bidirectional symmetrical protection mode)

If a bipolar symmetrical protection device is needed the GSOT05CL-V can also be used as a single line protection device.

Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be

connected.

Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOT05CL-V

passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the

breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series

impedances (resistances and inductances) of the protection device.

Due to the same clamping levels in positive and negative direction the GSOT05CL-V voltage clamping behaviour is bidirectional

and symmetrical (BiSy).

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 W/150 pF)

Fig. 2 - 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

20361

Ground

BiSy

ELECTRICAL CHARACTERISTICS GSOT05CL-V

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse working voltage

at IR = 1 μA

VRWM

Reverse current

at VR = 6 V

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

6.5

7.5

Reverse clamping voltage

at IPP = 1 A

-8

at IPP = IPPM = 13 A

12.6

Capacitance

at VR = 0 V; f = 1 MHz

-50

at VR = 2.5 V; f = 1 MHz

0 %

20 %

40 %

60 %

80 %

100 %

120 %

- 10 0 10 20 30 40 50 60 70 80 90 100

Time (ns)

Rise time = 0.7 ns to 1 ns

53 %

27 %

20557

0 %

20 %

40 %

60 %

80 %

100 %

010

Time (µs)

20 µs to 50 %

8 µs to 100 %

20548

GSOT05CL-V 数据表(PDF) 3 Page - Vishay Siliconix

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