BUH515 datasheet(2/3 Pages) ISC

部件名	BUH515

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUH515

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=100mA; IB=0

700

V(BR)EBO

Emitter-base breakdown voltage

IE=10mA; IC=0

VCEsat

Collector-emitter saturation voltage

IC=5A ;IB=1.25A

1.5

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=1.25A

1.3

ICES

Collector cut-off current

VCE=1500V; VBE=0

Tj=125℃

0.2

IEBO

Emitter cut-off current

VEB=5V; IC=0

100

μA

hFE

DC current gain

IC=5A ; VCE=5V

Switching times

Storage time

2.7

3.9

μs

Fall time

IC=5A;IB1=1.25A;IB2=2.5A;

VCC=400V

190

280

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

2.5

℃/W

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