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BUL310 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BUL310
功能描述  Silicon NPN Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUL310 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL310 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL310 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUL310 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUL310
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0; L=25mH
500
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=10mA ;IC=0
9
V
VCEsat-1
Collector-emitter saturation voltage
IC=1A; IB=0.2A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.7
V
VCEsat-3
Collector-emitter saturation voltage
IC=3A ;IB=0.6A
1.1
V
VBEsat-1
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.0
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.1
V
VBEsat-3
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.2
V
ICES
Collector cut-off current
VCE=1000V; VBE=0
TC=125℃
100
500
μA
ICEO
Collector cut-off current
VCE=400V; IB=0
250
μA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=2.5V
10
Switching times inductive load
ts
Storage time
1.9
μs
tf
Fall time
IC=2A ;VCL=250V
IB1 =0.4A;VBE(off)=-5V
L=200μH; RBB=0Ω
0.16
μs



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