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BUL810 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BUL810
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUL810 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL810 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL810 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL810
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; L= 25mH
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
9
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A ;IB= 1A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
1.5
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 12A ;IB= 2.4A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A ;IB= 1A
1.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
1.6
V
ICES
Collector Cutoff Current
VCE=1000V; VBE= 0;
VCE=1000V; VBE= 0;TC=125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
VCE= 450V; IB= 0
0.25
mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 5V
10
40
hFE-2
DC Current Gain
IC= 10mA ; VCE= 5V
10
Switching Times
(inductive load)
ts
Storage Time
1.5
2.3
μs
tf
Fall Time
IC= 8A ;IB1= 1.6A;VBE(off)= -5V
RBB= 0.4Ω, VCL= 350V,
L= 200μH
55
110
ns
isc Website：www.iscsemi.cn



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