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BUT11APX 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT11APX 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.33A 1.3 V ICES Collector Cutoff Current VCE= 1000V; VBE= 0 VCE= 1000V; VBE= 0; Tj= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 5mA; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 14 35 hFE-3 DC Current Gain IC= 2.5A; VCE= 5V 10 17 hFE-4 DC Current Gain IC= 3.5A; VCE= 5V 8 12 Switching Times; Resistive Load ton Turn-on Time 0.7 μs ts Storage Time 4.0 μs tf Fall Time IC= 2.5A; IB1= -IB2= 0.5A; RL= 75Ω; VBB2= 4V 0.45 μs isc Website:www.iscsemi.cn |
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