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BUT12F 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT12F 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUT12F BUT12AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUT12F 400 VCEO(SUS) Collector-emitter sustaining voltage BUT12AF IC=0.1A; IB=0;L=25mH 450 V BUT12F IC=6A; IB=1.2A VCEsat Collector-emitter saturation voltage BUT12AF IC=5A; IB=1A 1.5 V BUT12F IC=6A; IB=1.2A VBEsat Base-emitter saturation voltage BUT12AF IC=5A; IB=1A 1.5 V BUT12F VCE=850V ;VBE=0 Tj=125℃ 1.0 3.0 ICES Collector cut-off current BUT12AF VCE=1000V ;VBE=0 Tj=125℃ 1.0 3.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 μs ts Storage time 4.0 μs tf Fall time For BUT12F IC=6A;IB1=-IB2=1.2A;VCC=250V For BUT12AF IC=5A;IB1=-IB2=1A;VCC=250V 0.8 μs |
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