BUT93 datasheet(1/2 Pages) ISC

部件名	BUT93

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUT93

DESCRIPTION

·High Voltage

·High Speed Switching

·High Power Dissipation

APPLICATIONS

·Designed for switching mode power supply and electronic

ballast applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

600

V

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

6

A

IB

B

Base Current- Continuous

2

A

PC

Collector Power Dissipation

@TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃/W

isc Website：www.iscsemi.cn

类似零件编号 - BUT93

制造商	部件名	数据表	功能描述
STMicroelectronics	BUT90	66Kb / 4P	HIGH POWER NPN SILICON TRANSISTOR Apr-1997
Seme LAB	BUT90	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3
Seme LAB	BUT91	10Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
STMicroelectronics	BUT92	65Kb / 4P	FAST-SWITCHING POWER TRANSISTOR Jun-1997
STMicroelectronics	BUT92	46Kb / 4P	FAST-SWITCHING POWER TRANSISTOR Feb-2003

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