BUV26 datasheet(2/3 Pages) ISC

部件名	BUV26

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV26

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.2 A ;IB=0;L=25mH

VCEsat-1

Collector-emitter saturation voltage

IC=6A ;IB=0.6 A

0.6

VCEsat-2

Collector-emitter saturation voltage

IC=12A; IB=1.2A

1.5

VBEsat-1

Base-emitter saturation voltage

IC=6A ;IB=0.6 A

1.2

VBEsat-2

Base-emitter saturation voltage

IC=12A; IB=1.2A

2.0

ICEX

Collector cut-off current

VCE =180V;VBE =-1.5V;Tj=125℃

1.0

IEBO

Emitter cut-off current

VEB=5V; IC=0

1.0

Switching times resistive load

ton

Turn-on time

0.4

0.6

Storage time

0.45

1.0

μs

Fall time

IC=12A;IB1=1.2A; IB2=2.4A

VCC =50V

0.12

0.25

μs

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