BUV42 datasheet(1/3 Pages) ISC

部件名	BUV42

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV42

DESCRIPTION

・With TO-3 package

・Fast switching times

・Low collector saturation voltage

APPLICATIONS

・For switching applications

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings (Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

350

V

VCEO

Collector-emitter voltage

Open base

250

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

12

A

ICM

Collector current-peak

18

A

IB

Base current

2.5

A

IBM

Base current-peak

4

A

PT

Total power dissipation

TC≤25℃

120

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance from junction to case

1.46

℃/W

Fig.1 simplified outline (TO-3) and symbol

类似零件编号 - BUV42

制造商	部件名	数据表	功能描述
STMicroelectronics	BUV42	51Kb / 5P	SILICON NPN SWITCHING TRANSISTOR Oct-1995
Savantic, Inc.	BUV42	117Kb / 3P	Silicon NPN Power Transistors
Seme LAB	BUV42	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3
New Jersey Semi-Conduct...	BUV42	114Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
Savantic, Inc.	BUV42	119Kb / 3P	Silicon NPN Power Transistors

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