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BUV47 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV47 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUV47 BUV47B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 400 V BUV47 IC=5A; IB=1A VCEsat-1 Collector-emitter saturation voltage BUV47B IC=6A; IB=1.2A 1.5 V BUV47 IC=8A; IB=2.5A VCEsat-2 Collector-emitter saturation voltage BUV47B IC=9A; IB=3A 3.0 V BUV47 IC=5A; IB=1A VBEsat Base-emitter saturation voltage BUV47B IC=6A; IB=1.2A 1.6 V ICEX Collector cut-off current VCE=850V ;VBE=-2.5V 0.15 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=10A ; VCE=5V 7 10 14 Switching times : ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=5A IB1=- IB2=1.0A VCC=150V 0.8 μs |
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