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BUX40 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX40 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUX40 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2mA; IB=0 125 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=15 A;IB=1.88 A 1.6 V VBEsat Base-emitter saturation voltage IC=15 A;IB=1.88 A 2.0 V ICEX Collector cut-off current VCE=160V;VBE=-1.5V TC=125℃ 1.0 5.0 mA ICEO Collector cut-off current VCE=100V;IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=4V 15 45 hFE-2 DC current gain IC=15A ; VCE=4V 8 fT Transition frequency IC=1A ; VCE=15V; f=10MHz 8.0 MHz Switching times ton Turn-on time IC=15A ;IB1=1.88A VCC=30V 1.2 μs ts Storage time 1.0 μs tf Fall time IC=15A ;IB1=-IB2=1.88A VCC=30V 0.4 μs |
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