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D44VH 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D44VH 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D44VH 1 30 D44VH 4 45 D44VH 7 60 VCEO(SUS) Collector-Emitter Sustaining Voltage D44VH 10 IC= 25mA ;IB= 0 B 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4A 0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A ;IB= 3A;TC=100℃ 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.4A IC= 8A ;IB= 0.4A;TC=100℃ 1.2 1.1 V ICEV Collector Cutoff Current VCE=RatedVCE;VBE(off)=4V VCE=RatedVCE;VBE(off)=4V;TC=100℃ 10 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE-1 DC Current Gain IC= 2A ; VCE= 1V 35 hFE-2 DC Current Gain IC= 4A ; VCE= 1V 20 COB Output Capacitance IE= 0;VCB= 10V,ftest= 1.0MHz 120 pF fT Current-Gain—Bandwidth Product IC= 0.1A;VCE= 10V;ftest= 20MHz 50 MHz Switching Times td Delay Time 50 ns tr Rise Time 250 ns ts Storage Time 700 ns tf Fall Time IC= 8A; IB1= -IB2= 0.8A VCC= 20V 90 ns isc Website:www.iscsemi.cn |
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