IRF634 datasheet(1/1 Pages) ISC

部件名	IRF634

功能描述	N-channel mosfet transistor

PDF	1 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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MOSFET

INCHANGE

IRF634

N-channel mosfet transistor

Features

1 2 3

・With TO-220 package

・Simple drive requirements

・Fast switching

・VDSS=250V; RDS(ON)≤0.45Ω;ID=8.1A

・1.gate 2.drain 3.source

Absolute Maximum Ratings Tc=25℃

SYMBOL

PARAMETER

RATING

UNIT

VDSS

Drain-source voltage (VGS=0)

250

V

VGS

Gate-source voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

8.1

A

Ptot

Total Dissipation@TC=25℃

74

W

Tj

Max. Operating Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

TO-220

Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-source breakdown voltage

VGS=0; ID=0.25mA

250

V

VGS(TH)

Gate threshold voltage

VDS= VGS; ID=0.25mA

2

4

V

RDS(ON)

Drain-source on-stage resistance

VGS=10V; ID=5.1A

450

mΩ

IGSS

Gate source leakage current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero gate voltage drain current

VDS=250V; VGS=0

25

uA

VSD

Diode forward voltage

IF=8.1A; VGS=0

2.0

V

类似零件编号 - IRF634

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF634	333Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Jul-2001
Fairchild Semiconductor	IRF634	224Kb / 7P	Advanced Power MOSFET
International Rectifier	IRF634	171Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
Vishay Siliconix	IRF634	1Mb / 8P	Power MOSFET 07-Jul-08
STMicroelectronics	IRF634	326Kb / 14P	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET 28-Jun-2006

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