MJ2500 datasheet(1/2 Pages) ISC

部件名	MJ2500

功能描述	isc Silicon PNP Darlingtion Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

MJ2500

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 1000 (Min) @ IC = -5A

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= -60V(Min)

·Complement to type MJ3000

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-10

A

IB

B

Base Current

-0.2

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.17

℃/W

isc Website：www.iscsemi.cn

类似零件编号 - MJ2500

制造商	部件名	数据表	功能描述
Motorola, Inc	MJ2500	132Kb / 4P	10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
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Comset Semiconductor	MJ2500	78Kb / 3P	COMPLEMENTARY POWER DARLINGTONS

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