MJ3040 datasheet(1/2 Pages) ISC

部件名	MJ3040

功能描述	isc Silicon NPN Darlingtion Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

MJ3040

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 100 (Min) @ IC =2.5A

·Collector-Emitter Sustaining Voltage-

VCEO(SUS)=300V(Min)

APPLICATIONS

·Developed for line operated amplifier, series pass and

Switching regulator applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current -Continuous

10

A

PC

Collector Power Dissipation@TC=25℃

175

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

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制造商	部件名	数据表	功能描述
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