MJ6308 datasheet(1/2 Pages) ISC

部件名	MJ6308

功能描述	isc Silicon NPN Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ6308

DESCRIPTION

·700V Collector-Base Breakdown Capability

·Excellent Dynamic Saturation Characteristics

·Fast swithing

·Low Saturation Voltage

·Advanced Technology Replacement for the 2N6308

APPLICATIONS

·Designed in circuits requiring good dynamio saturation

characteristics in swithing power supply applications and

other inductive swithing circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

700

V

VCES

Collector-Emitter Sustaining Voltage

380

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

8

A

IB

B

Base Current-Continuous

4

A

PC

Collector Power Dissipation@TC=25℃

140

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.25

℃/W

isc Website：www.iscsemi.cn

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