MJE341 datasheet(2/2 Pages) ISC

部件名	MJE341

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE341

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 1.0mA; IB= 0

150

VCE(sat)

Collector-Emitter Saturation Voltage

IC=150mA ;IB=15mA

2.3

VBE(on)

Base-Emitter On Voltage

IC=50mA ; VCE= 10V

1.0

ICBO

Collector Cutoff Current

VCB= 175V; IE= 0

0.3

ICEO

Collector Cutoff Current

VCB= 150V; IE= 0

1.0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

0.1

hFE-1

DC Current Gain

IC= 10m A ; VCE= 10V

hFE-2

DC Current Gain

IC= 50m A ; VCE= 10V

200

hFE-3

DC Current Gain

IC=150m A ; VCE= 10V

COB

Output Capacitance

IE= 0, VCB=20V; f= 0.1MHz

Current Gain-Bandwidth Product

IC=50mA ;VCE=25V; ftest=1MHz

MHz

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