MJE700T datasheet(2/2 Pages) ISC

部件名	MJE700T

功能描述	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

MJE700T

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=-50mA; IB= 0

-60

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC=-1.5A; IB=-40mA

-2.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC=-4A; IB=-40mA

-3.0

VBE(on)-1

Base-Emitter On Voltage

IC=-1.5A; VCE=-3V

-2.5

VBE(on)-2

Base-Emitter On Voltage

IC=-4A; VCE=-3V

-3.0

ICEO

Collector Cutoff Current

VCE=-60V; IB= 0

-0.1

ICBO

Collector Cutoff Current

VCB=-60V; IE= 0

VCB=-60V; IE= 0;TC= 100℃

-0.1

-0.5

IEBO

Emitter Cutoff Current

VEB=-5V; IC= 0

-2.0

hFE-1

DC Current Gain

IC=-1.5A ; VCE=-3V

750

hFE-2

DC Current Gain

IC=-4A ; VCE=-3V

100

isc Website：www.iscsemi.cn

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