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BAS28W 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BAS28W 数据表(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page ![]() BAS 28W Semiconductor Group Mar-16-1998 1 Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes VPS05605 4 2 1 3 Type Marking Ordering Code Pin Configuration Package BAS 28W JTs Q62702-A3466 1 = C1 2 = C2 3 = A2 SOT-343 4 = A1 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR V 75 Peak reverse voltage 85 VRM 200 Forward current IF mA A IFS Surge forward current, t = 1 µs 4.5 Total power dissipation, TS = 103 °C mW 250 Ptot 150 Junction temperature °C Tj Storage temperature Tstg - 65 ...+150 Thermal Resistance Junction - ambient 1) RthJA ≤ 460 K/W Junction - soldering point RthJS ≤ 190 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 1998-11-01 |
类似零件编号 - BAS28W |
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类似说明 - BAS28W |
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