LL41 datasheet(2/5 Pages) VISHAY

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Document Number 85671

Rev. 1.6, 05-Aug-10

LL41

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

2) Pulse test, t

p = 300 µs

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

RthJA

3001)

K/W

Junction temperature

125

°C

Ambient operating temperature range

Tamb

- 65 to + 125

°C

Storage temperature range

Tstg

- 65 to + 150

°C

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage2)

IR = 100 µA

V(BR)

100

110

Leakage current2)

VR = 50 V, Tj = 25 °C

100

VR = 50 V, Tj = 100 °C

µA

Forward voltage2)

IF = 1 mA

400

450

IF = 200 mA

1000

Diode capacitance

VR = 1 V, f = 1 MHz

2pF

Figure 1. Admissible Power Dissipation vs. Ambient Temperature

20225

Tamb - Ambient Temperature (°C)

100

150

200

250

100

150

Figure 2. Typical Reverse Characteristics

100000

10000

1000

100

20226

VR - Reverse Voltage (V)

1020 3040506070 80 90 100

25 °C

T = 125 °C

100 °C

75 °C

50 °C

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