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LL101C 数据表(PDF) 2 Page - Vishay Siliconix

部件名 LL101C
功能描述  Small Signal Schottky Diodes
PDF  5 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

LL101C 数据表(HTML) 2 Page - Vishay Siliconix

  LL101C Datasheet HTML 1Page - Vishay Siliconix LL101C Datasheet HTML 2Page - Vishay Siliconix LL101C Datasheet HTML 3Page - Vishay Siliconix LL101C Datasheet HTML 4Page - Vishay Siliconix LL101C Datasheet HTML 5Page - Vishay Siliconix  
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Document Number 85626
Rev. 1.3, 05-Aug-10
LL101A, LL101B, LL101C
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Thermal resistance junction to
ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse Breakdown Voltage
IR = 10 µA
LL101A
V(BR)
60
V
LL101B
V(BR)
50
V
LL101C
V(BR)
40
V
Leakage current
VR = 50 V
LL101A
IR
200
nA
VR = 40 V
LL101B
IR
200
nA
VR = 30 V
LL101C
IR
200
nA
Forward voltage drop
IF = 1 mA
LL101A
VF
410
mV
IF = 1 mA
LL101B
VF
400
mV
IF = 1 mA
LL101C
VF
390
mV
IF = 15 mA
LL101A
VF
1000
mV
LL101B
VF
950
mV
LL101C
VF
900
mV
Diode capacitance
VR = 0 V, f = 1 MHz
LL101A
CD
2.0
pF
VR = 0 V, f = 1 MHz
LL101B
CD
2.1
pF
LL101C
CD
2.2
pF
Reverse recovery time
IF = IR = 5 mA,
recover to 0.1 IR
trr
1ns
Figure 1. Typ. IF vs. VF for primary conduction through the
Schottky barrier
gll101a_01
Figure 2. Typ. IF of combination Schottky barrrier and PN junction
guard ring
gll101a_02



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