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S2055AF 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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S2055AF 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors S2055AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125℃ 1 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=5V;f=5MHz 7 MHz Switching times inductive load ts Storage time 7 μs tf Fall time IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3μH 0.55 μs |
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