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STK73902 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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STK73902 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Thick Film Hybrid IC INCHANGE Specifications Maximum Ratings at Ta=25℃, Tc=25℃ unless otherwise specified Parameter Symbol Conditions Ratings UNIT Operating substrate temperature TC max Recommended value is 105℃ 115 ℃ AC input voltage VAC Specified test circuit 140 Vrms Operating temperature Topr -10 to+85 ℃ Storage temperature Tstg -30 to+115 ℃ Maximum output power Wo max Specified test circuit VO=135V 180 W (TR1) Drain current ID 10 A Pulse drain current ID(Pulse) 35 A Drain reverse current IDR 10 A Gate-source voltage VGSS ±30 V Allowable power dissipation PD 100 W Chip junction temperature Tj max 150 ℃ (ZD1) Allowable power dissipation PZD1 500 mW Chip junction temperature Tj(ZD1)max 125 ℃ Recommended operating ranges at Ta=25℃ Parameter Symbol Conditions Ratings UNIT Pin 4 input voltage V4 ±8 to±24 V Oscillator frequency fOSC 20 to 100 kHz Operating characteristics at Ta=25℃,Tc=25℃ ( unless otherwise specified,specified test circuits) Parameter Symbol Conditions min Typ max UNIT (TR1) Drain-source breakdown voltage V(BR)DSS ID=1mA,VGS=0V 500 V Gate-source cutoff voltage VGS(off) ID=1mA,VDS=10V 2.5 3.5 5.0 V ON resistance RDS(on) ID=5A,VGS=10V 0.6 0.9 Ω Input capacitance Ciss VDS=25V,VGS=0V,f=1MHz 1400 pF (ZD1) Zener voltage VZ IZ=5mA 23.7 26.3 V |
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