TIP32E datasheet(1/2 Pages) ISC

部件名	TIP32E

功能描述	isc Silicon PNP Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

TIP32E

DESCRIPTION

·DC Current Gain -hFE = 25(Min)@ IC= -1A

·Collector-Emitter Breakdown Voltage-

: V(BR) CEO= -140V(Min)

·Complement to Type TIP31E

APPLICATIONS

·Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Pulse

-5

A

IB

B

Base Current

-1

A

PC

Collector Power Dissipation

TC=25℃

40

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.125

℃/W

isc Website：www.iscsemi.cn

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