TIP35D datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

TIP35D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA; IB= 0

120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 15A; IB= 3A

2.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 25A; IB= 6.25A

5.0

VBE(on)-1

Base-Emitter On Voltage

IC= 15A; VCE= 4V

2.0

VBE(on)-2

Base-Emitter On Voltage

IC= 25A; VCE= 4V

4.0

ICEO

Collector Cutoff Current

VCE= 90V; IB= 0

1.0

ICES

Collector Cutoff Current

VCE= 160V; VBE= 0

0.7

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE-1

DC Current Gain

IC= 1.5A; VCE= 4V

hFE-2

DC Current Gain

IC= 15A; VCE= 4V

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V; ftest= 1.0MHz

MHz

Switching Times

ton

Turn-On Time

1.2

μs

toff

Turn-Off Time

IC= 15A; IB1= -IB2= 1.5A;

VBE(off)= 4.15V; RL= 2Ω

0.9

μs

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