TIP160 datasheet(2/3 Pages) ISC

部件名	TIP160

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

TIP160/161/162

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

TIP160

320

TIP161

350

V(BR)CEO

Collector-emitter

breakdown voltage

TIP162

IC=10mA, IB=0

380

VCEsat-1

Collector-emitter saturation voltage

IC=6.5A ,IB=0.1A

2.8

VCEsat-2

Collector-emitter saturation voltage

IC=10A ,IB=1A

2.9

VBEsat

Base-emitter saturation voltage

IC=6.5A ,IB=0.1A

2.2

Diode forward voltage

IF=10A

3.5

TIP160

VCE=320V, IB=0

TIP161

VCE=350V, IB=0

ICEO

Collector

cut-off current

TIP162

VCE=380V, IB=0

1.0

IEBO

Emitter cut-off current

VEB=5V; IC=0

100

hFE

DC current gain

IC=4A ; VCE=2.2V

200

Switching times

Delay time

0.3

μs

Rise time

1.5

μs

Storage time

2.3

μs

Fall time

VCC =33 V, IC = 6.5 A,

IB1 =-IB2 =100 mA

tp=20μs ;Duty Cycle≤2.0%

2.8

μs

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