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TIP152 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 TIP152
功能描述  Silicon NPN Power Transistors
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

TIP152 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  TIP152 Datasheet HTML 1Page - Inchange Semiconductor Company Limited TIP152 Datasheet HTML 2Page - Inchange Semiconductor Company Limited TIP152 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
TIP150/151/152
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
TIP150
300
TIP151
350
V(BR)CEO
Collector-emitter
breakdown voltage
TIP152
IC=10mA, IB=0
400
V
TIP150
300
TIP151
350
V(BR)CBO
Collector-base
breakdown voltage
TIP152
IC=1mA, IE=0
400
V
VCEsat-1
Collector-emitter saturation voltage
IC=1A ,IB=10mA
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ,IB=100mA
1.5
V
VCEsat-3
Collector-emitter saturation voltage
IC=5A ,IB=250mA
2.0
V
VBE sat-1
Base-emitter saturation voltage
IC=2A ,IB=100mA
2.2
V
VBE sat-2
Base-emitter saturation voltage
IC=5A ,IB=250mA
2.3
V
TIP150
VCE=300V, IB=0
TIP151
VCE=350V, IB=0
ICEO
Collector cut-off current
TIP152
VCE=400V, IB=0
250
μA
IEBO
Emitter cut-off current
VEB=8V; IC=0
15
mA
hFE-1
DC current gain
IC=2.5A ; VCE=5V
150
hFE-2
DC current gain
IC=5A ; VCE=5V
50
hFE-3
DC current gain
IC=7A ; VCE=5V
15
VF
Diode forward voltage
IF=7A
3.5
V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
150
pF
Switching times
td
Delay time
0.03
μs
tr
Rise time
0.18
μs
ts
Storage time
3.5
μs
tf
Fall time
VCC=250V; IC=5A
IB1=-IB2=250mA
tp=20μs;Duty Cycle≤2.0%
1.6
μs



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