Document Number: 89319

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Revision: 21-Sep-10

3

MBRF2090CT, MBRF20100CT

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitanc Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0

0.2

0.1

0.5

1.0

0.4

0.3

1

100

10

0.01

0.1

0.6

0.7

0.8

0.9

Instantaneous Forward Voltage (V)

T

T

T

Percent of Rated Peak Reverse Voltage (%)

20

10

100

40

60

80

1

10

0.01

0.1

100

0.001

30

50

70

90

T

T

T

1

10

100

1000

10 000

10

100

Reverse Voltage (V)

T

f = 1 MHz

V

0.1

10

1

100

1

10

0.001

0.1

t - Pulse Duration (s)

Junction to Case

0.01

ITO-220AB

0.076 (1.93) REF.

45° REF.

PIN

3

2

1

0.404 (10.26)

0.384 (9.75)

0.076 (1.93) REF.

0.600 (15.24)

0.580 (14.73)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.057 (1.45)

0.045 (1.14)

0.191 (4.85)

0.171 (4.35)

0.671 (17.04)

0.651 (16.54)

0.035 (0.89)

0.025 (0.64)

0.205 (5.21)

0.195 (4.95)

0.025 (0.64)

0.015 (0.38)

0.105 (2.67)

0.095 (2.41)

0.028 (0.71)

0.020 (0.51)

0.110 (2.79)

0.100 (2.54)

7° REF.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.110 (2.79)

0.100 (2.54)

0.190 (4.83)

0.170 (4.32)

7° REF.

7° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.350 (8.89)

0.330 (8.38)