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2N6031 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6031 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N6031 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -140 V VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-16A ;IB=-4A -2.0 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-8A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 -2.0 mA ICEO Collector cut-off current VCE=-70V; IB=0 -2.0 mA VCE=ratedVCB -2.0 ICEX Collector cut-off current (VBE(off)=1.5V) VCE=ratedVCB; TC=150℃ -7.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE-1 DC current gain IC=-8A ; VCE=-2V 15 60 hFE-2 DC current gain IC=-16A ; VCE=-2V 4 COB Output capacitance IE=0 ; VCB=-10V ;f=0.1MHz 1000 pF fT Transition frequency IC=-1A ; VCE=-20V ;f=0.5MHz 1.0 MHz |
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