SIE882DF datasheet(4/10 Pages) VISHAY

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Document Number: 65002

S09-1221-Rev. A, 29-Jun-09

Vishay Siliconix

SiE882DF

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

100

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.001

0.002

0.003

0.004

0.005

TJ =25 °C

ID =20A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

Time (s)

1000

0.1

0.01

100

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

1ms

10 ms

0.1

TA = 25 °C

Single Pulse

Limited byRDS(on)*

10 s

BVDSS Limited

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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