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SIP32413 数据表(PDF) 3 Page - Vishay Siliconix |
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SIP32413 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 12 page ![]() Document Number: 71437 S11-0366-Rev. A, 07-Mar-11 www.vishay.com 3 Vishay Siliconix SiP32413, SiP32414 Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. d. Not tested, guarantee by design. SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VIN = 5.0 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits - 40 °C to 85 °C Unit Min.a Typ.b Max.a Operating Voltagec VIN 1.1 - 5.5 V Quiescent Current IQ VIN = 1.2 V, CNTRL = active - 6.7 14 µA VIN = 1.8 V, CNTRL = active - 14 24 VIN = 2.5 V, CNTRL = active - 25 40 VIN = 3.6 V, CNTRL = active - 40 60 VIN = 4.3 V, CNTRL = active - 52 75 VIN = 5.0 V, CNTRL = active - 71 99 Off Supply Current IQ(off) CNTRL = inactive, OUT = open - - 1 Off Switch Current IDS(off) CNTRL = inactive, OUT = 0 - - 1 Reverse Blocking Current IRB VOUT = 5.5 V, VIN = 1.2 V,VEN = inactive -- 10 On-Resistance RDS(on) VIN = 1.2 V, IL = 100 mA, TA = 25 °C - 66 76 m Ω VIN = 1.8 V, IL = 100 mA, TA = 25 °C - 62 72 VIN = 2.5 V, IL = 100 mA, TA = 25 °C - 62 72 VIN = 3.6 V, IL = 100 mA, TA = 25 °C -62 72 VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 62 72 VIN = 5.0 V, IL = 100 mA, TA = 25 °C -62 72 On-Resistance Temp.-Coefficient TCRDS - 3900 - ppm/°C CNTRL Input Low Voltagec VIL VIN = 1.2 V -0.5 0.3 V VIN = 1.8 V - 0.72 0.4d VIN = 2.5 V - 0.87 0.5d VIN = 3.6 V -1.0 0.6d VIN = 4.3 V - 1.08 0.7d VIN = 5.0 V - 1.15 0.8d CNTRL Input High Voltagec VIH VIN = 1.2 V 0.9d 0.54 - VIN = 1.8 V 1.2d 0.78 - VIN = 2.5 V 1.4d 0.96 - VIN = 3.6 V 1.6d 1.2 - VIN = 4.3 V 1.7d 1.32 - VIN = 5.0 V 1.8 1.45 - EN Input Leakage ISINK VEN = 5.5 V - - 1 µA Output Pulldown Resistance RPD CNTRL = inactive, TA = 25 °C (SiP32414 only) - 217 280 Ω Output Turn-On Delay Time td(on) VIN = 3.6 V, RLOAD = 10 Ω, TA = 25 °C - 140 210 µs Output Turn-On Rise Time t(on) 80 150 220 Output Turn-Off Delay Time td(off) -0.27 1 |
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