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ISO7420FE 数据表(PDF) 3 Page - Texas Instruments |
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ISO7420FE 数据表(HTML) 3 Page - Texas Instruments |
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3 / 25 page ![]() ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC www.ti.com SLLSE45D – DECEMBER 2010 – REVISED DECEMBER 2011 ABSOLUTE MAXIMUM RATINGS (1) VALUE VCC Supply voltage(2), VCC1, VCC2 –0.5 V to 6 V VI Voltage at IN, OUT –0.5 V to 6 V IO Output current ±15 mA Human-body model JEDEC Standard 22, Test Method A114-C.01 ±3 kV Electrostatic Field-induced charged-device ESD JEDEC Standard 22, Test Method C101 All pins ±1.5 kV discharge model Machine model ANSI/ESDS5.2-1996 ±200 V TJ(Max) Maximum junction temperature 150 °C Tstg Storage temperature -65 °C to 150°C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values. RECOMMENDED OPERATING CONDITIONS MIN TYP MAX UNIT VCC1, VCC2 Supply voltage 3.0 5.5 V IOH High-level output current –4 mA IOL Low-level output current 4 mA VIH High-level input voltage 2 VCC V VIL Low-level input voltage 0 0.8 V tui Input pulse duration 20 ns 1 / tui Signaling rate 0 50(1) Mbps TJ (2) Junction temperature –40 136 °C TA Ambient Temperature -40 25 125 °C (1) Under typical conditions, E-grade devices are capable of signaling rate > 150 Mbps. (2) To maintain the recommended operating conditions for TJ, see the Package Thermal Characteristics table. Copyright © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): ISO7420E ISO7420FE ISO7420FCC ISO7421E ISO7421FE ISO7421FCC |
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