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U2D 数据表(PDF) 2 Page - Vishay Siliconix |
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U2D 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89096 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-Oct-09 U2B, U2C, U2D Vishay General Semiconductor New Product Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note (1) Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage IF = 2 A TA = 25 °C VF (1) 0.86 0.90 V TA = 100 °C 0.76 0.83 Reverse current Rated VR TA = 25 °C IR (2) -10 μA TA = 100 °C 180 350 Reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A TA = 25 °C trr - 20 ns IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM TA = 25 °C 27 - TA = 100 °C 35 - Storage charge IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM TA = 25 °C Qrr 9- nC TA = 100 °C 19 - Typical junction capacitance 4.0 V, 1 MHz CJ 16 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL U2B U2C U2D UNIT Typical thermal resistance RθJA (1) 105 °C/W RθJM (1) 18 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U2D-E3/52T 0.099 52T 750 7" diameter plastic tape and reel U2D-E3/5BT 0.099 5BT 3200 13" diameter plastic tape and reel 0 3.0 80 90 100 110 120 130 140 150 TM - Mount Temperature (°C) 2.0 1.0 Resistive or Inductive Load 0 0.4 0.8 1.2 1.6 2.0 0 2.4 0.4 Average Forward Current (A) 2.0 1.6 1.2 0.8 D = t p/T t p T D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 |
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